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Unified Compact Model for Nanowire Transistors Including Quantum Effects and Quasi-Ballistic Transport

  • Published:2017-04 Issue:4 Volume:64 Page:1837-1845
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Dasgupta AvirupORCID,Agarwal Amit,Chauhan Yogesh Singh

Funder

Ramanujan Fellowship Research Grant

Department of Science and Technology, Council of Scientific and Industrial Research (India)

Berkeley Device Modeling Center

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs;Fundamental Research;2023-02

2. Field-Effect Transistors Based on Two-dimensional Materials (Invited);Transactions of the Indian National Academy of Engineering;2022-11-21

3. Dilute magnetic semiconductor electrode based all semiconductor magnetic tunnel junction for high-temperature applications;Physica B: Condensed Matter;2022-02

4. A unified compact model for electrostatics of III–V GAA transistors with different geometries;Journal of Computational Electronics;2021-08-07

5. Physics-augmented Neural Compact Model for Emerging Device Technologies;2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2020-09-23
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