Reliability of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET in High-Temperature Harsh Environment
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00531-0.pdf
Reference28 articles.
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3. Das S, Zhang W, Demarteau M, Hoffmann A, Dubey M, Roelofs A (2014) Tunable transport gap in phosphorene. Nano Lett 14(10):5733–5739
4. Wang Y, Slassi A, Cornil J, Beljonne D, Samorì PJS (2019) Black phosphorus: tuning the optical and electrical properties of few-layer black phosphorus via physisorption of small solvent molecules (Small 47/2019). Small 15(47):1970252
5. Jia C, Zhao L, Cui M, Yang F, Cheng G, Yang G, Zeng Z (2019) Surface coordination modification and electrical properties of few-layer black phosphorus exfoliated by the liquid-phase method. J Alloys Compd 799:99–107
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