Author:
Bourahla N.,Hadri B.,Bourahla A.
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Erry Dwi Kurniawan, Hao Yang, Chia-Chou Lin, Yung-ChunWu, Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology, 12454; No. 6. doi: https://doi.org/10.1016/j.microrel.2017.06.037
2. Boukortt N, Hadri B, Patanè S, Caddemi A, Crupi G Electrical characteristics of 8-nm SOI n-FinFETs. Springer, ISSN 1876-990X. https://doi.org/10.1007/s12633-016-9428-6.2016
3. Sangam Lal Jaiswal, Anil Kumar, A.K.Jaiswal, Rajeev Paulus and Mayur Kumar, Study of Electrical Characteristics of SOI n-MOSFET at Various Technological Nodes, ijcet, Vol.4, No.3, P-ISSN 2347–5161. INPRESSCO, June2014
4. Slimani Samia, Djellouli Bouaza, High dielectric permittivity impact on SOI Double-Gat, mee. 112, Elseiver (2013) 213–219, 0167–9317 /j.mee.2013.04.015
5. Vinay Kumar, Richa Gupta, Raminder Preet Pal Singh, Rakesh Vaid. Performance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials, IJIRSET Vol. 5, Issue 7, July 2016, DOI https://doi.org/10.4010/2016.1462, ISSN 2321 3361
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献