Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-020-00910-7.pdf
Reference37 articles.
1. Moore GE (1998) Cramming more components onto integrated circuits. Proc IEEE 86(1):82–85. https://doi.org/10.1109/JPROC.1998.658762
2. Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G (2013) Low-temperature electrical characterization of junctionless transistors. Solid State Electron 80:135–141. https://doi.org/10.1016/j.sse.2012.10.018
3. Kumar A, Gupta N, Chaujar R (2016) TCAD RF performance investigation of transparent gate recessed channel MOSFET. Microelectron J 49:36–42. https://doi.org/10.1016/j.mejo.2015.12.007
4. Doria RT, Pavanello MA, Lee CW, Ferain I, Dehdashti-Akhavan N, Yan R, Razavi P, Yu R, Kranti A, Colinge JP (2010) Analog operation and harmonic distortion temperature dependence of nMOS Junctionless transistors. ECS Trans 31(1):13–20. https://doi.org/10.1149/1.3474137
5. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol 5(3):225–229. https://doi.org/10.1038/nnano.2010.15
Cited by 47 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths;Micro and Nanostructures;2024-11
2. Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric;Memories - Materials, Devices, Circuits and Systems;2024-08
3. Impact of Device Parametrics on a 10nm Gate Length SOI n-FinFET;2024 IEEE International Conference on Information Technology, Electronics and Intelligent Communication Systems (ICITEICS);2024-06-28
4. Enhancing Radio Frequency Performance of InGaAs-SOI-FinFET Through Optimized Channel Doping Density;2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE);2024-05-09
5. Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs;Microsystem Technologies;2024-04-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3