Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths-Reference-Cited by-同舟云学术

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Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths

Published:2024-11 Issue: Volume:195 Page:207974
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Parvathi Dharavath^ORCID,Prithvi P

Publisher

Elsevier BV

Reference55 articles.

1. Physical insights regarding design and performance of independent-gate FinFETs;Zhang;IEEE Trans. Electron. Dev.,2005

2. Ground plane fin-shaped field effect transistor (GP-FinFET): a FinFET for low leakage power circuits;Saremi;Microelectron. Eng.,2012

3. Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis;Ghosh;Int. J. RF Microw. Computer-Aided Eng.,2020

4. Nanosheet field effect transistors-A next generation device to keep Moore's law alive: an intensive study;Ajayan;Microelectron. J.,2021

5. Analysis of short-channel effects in junctionless DG MOSFETs;Xie;IEEE Trans. Electron. Dev.,2017

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