Analysis of Temperature Dependent Effects on DC, Analog/RF and Linearity Parameters for a Delta Doped Heterojunction Vertical tunnel FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01504-7.pdf
Reference48 articles.
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3. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479:329–337
4. Ionescu AM, Michielis LD, Dagtekin N, Salvatore G, Cao J, Rusu A, Bartsch S (2011) Ultra low power: Emerging devices and their benefits for integrated circuits. IEDM Tech Dig :1611–1614
5. Boucart K, Ionescu AM (2007) Double gate tunnel FET with High-k gate dielectric. IEEE Trans Electron Devices 54:1725–1733
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