High-k Dielectric Double Gate Junctionless (DG-JL) MOSFET for Ultra Low Power Applications- Analytical Model
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01525-2.pdf
Reference26 articles.
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3. Ganesh A, Goel K, Mayall JS, Rewari S (2021)Subthreshold analytical model of asymmetric gate stack triple metal gate all around MOSFET (AGSTMGAAFET)for improved analog applications. Silicon. https://doi.org/10.1007/s12633-021-01173-6
4. Goel A, Rewari S, Verma S, Gupta RS (2019)GaN-basedDual-Metal Gate Stack Engineered Junctionless-Surrounding-Gate(DMSEJSG)MOSFET for high power applications. IEEE 16th India Council International Conference (INDICON), 1-4. https://doi.org/10.1109/INDICON47234.2019.9030261.
5. Goel A, Rewari S, Verma S, Deswal SS, Gupta RS (2021)Dielectric modulated junctionless biotube FET (DM-JL-BT-FET) bio-sensor. IEEE Sens J 21(5):16731–16743. https://doi.org/10.1109/JSEN.2021.3077540
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