Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s00542-023-05524-8.pdf
Reference25 articles.
1. Akbari M, Hussein SM, Hashim Y, Tang K-T (2021) An adjustable dual-output current mode MOSFET-only filter. IEEE Trans Circ Syst II Express Briefs 68(6):1817–1821. https://doi.org/10.1109/tcsii.2020.3044464
2. Cao Y, Zhang W, Fu J, Wang Q, Liu L, Guo A (2019) A complete small-signal MOSFET model and parameter extraction technique for millimeter wave applications. IEEE J Electron Devices Soc. https://doi.org/10.1109/jeds.2019.2900202
3. Cho S, Kim KR, Park B-G, Kang IM (2011) RF performance and small-signal parameter extraction of junction-less silicon nanowire MOSFETs. IEEE Trans Electron Devices 58(5):1388–1396. https://doi.org/10.1109/TED.2011.2109724
4. Gupta C, Mohamed N, Agarwal H, Goel R, Hu C, Chauhan Y (2018) Accurate and computationally efficient modeling of non quasi static effects in MOSFETs for millimeter wave applications. IEEE Trans Electron Devices. https://doi.org/10.1109/ted.2018.2854671
5. Gupta S, Pandey N, Gupta RS (2021) Analytical modeling of dual-metal gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET. Appl Phys A 127:520. https://doi.org/10.1007/s00339-021-04652-0
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