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Junctionless transistors

Published:2012-05 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Meeting for Future of Electron Devices, Kansai
language:
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Author:

Colinge Jean-Pierre

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6212670/6218554/06218561.pdf?arnumber=6218561

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of performance evaluation of various characteristics of a single phase full bridge inverter circuit using surrounded channel junctionless field effect transistor;Discover Electronics;2024-07-27

2. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

3. DESIGN AND ANALYSIS OF ELECTRICAL CHARACTERISTICS OF INVERTED-T JUNCTIONLESS (JL) FET THROUGH GEOMETRIC AND PROCESS VARIATIONS FOR HIGH FREQUENCY APPLICATIONS;Suranaree Journal of Science and Technology;2024-02-21

4. Dielectrically Modulated Junctionless Rectangular Gate All Around FET based Biosensor for Label Free detection of Neutral Biomolecules;2023 16th International Conference on Sensing Technology (ICST);2023-12-17

5. Extraction of Drain Current Variability Components in Junctionless Nanowire Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

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