Microstructure, chemical inhomogeneity, and electronic properties of tin-incorporated Ga2O3 compounds
Author:
Funder
National Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-022-07207-7.pdf
Reference77 articles.
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2. Uddin A, Bhuiyan AFM, Feng Z, Johnson JM, Huang H-L, Hwang J, Zhao H (2020) MOCVD epitaxy of ultrawide bandgap β-(AlxGa1−x)2O3 with high-Al composition on (100) β-Ga2O3 substrates. Cryst Growth Des 20(10):6722–6730
3. Gutierrez G, Sundin EM, Nalam PG, Zade V, Romero R, Nair AN, Sreenivasan S, Das D, Li C, Ramana CV (2021) Interfacial phase modulation-induced structural distortion, band gap reduction, and nonlinear optical activity in tin-incorporated Ga2O3. J Phys Chem C 125(37):20468–20481
4. Farvid SS, Wang T, Radovanovic PV (2011) Colloidal gallium indium oxide nanocrystals: a multifunctional light-emitting phosphor broadly tunable by alloy composition. J Am Chem Soc 133(17):6711–6719
5. Kim J, Mastro MA, Tadjer MJ, Kim J (2018) Heterostructure WSe2−Ga2O3 junction field-effect transistor for low-dimensional high-power electronics. ACS Appl Mater Interfaces 10(35):29724–29729
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