Bandgap regulation and doping modification of Ga2−xCrxSe3 nanosheets-Reference-Cited by-同舟云学术

Bandgap regulation and doping modification of Ga_2−xCr_xSe₃ nanosheets

Published:2024 Issue:26 Volume:14 Page:18685-18694
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yang Huan¹²^ORCID,Wu Yue¹²,Li Huirong¹²,Zhang Yiwen¹²,Gao Linmei¹²,Wang Lanfang¹²^ORCID,Wang Fang¹²^ORCID

Affiliation:

1. School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Taiyuan 030032, China

2. Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education, Taiyuan 030032, China

Abstract

By adjusting the annealing temperature (150–300 °C) and introducing varying Cr doping concentrations, the optical bandgap of Ga2−xCrxSe3 was continuously tunable in the range of 2.23 to 2.80 eV.

Funder

National Natural Science Foundation of China

Shanxi Province Science Foundation for Youths

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA03028A

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2. Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable Mo x Re 1– x S 2 Alloys

3. Strain Engineering of 2D Materials: Issues and Opportunities at the Interface

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