Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates-Reference-Cited by-同舟云学术

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Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates

Published:2022-06-02 Issue: Volume: Page:
ISSN:1975-0102
Container-title:Journal of Electrical Engineering & Technology
language:en
Short-container-title:J. Electr. Eng. Technol.

Author:

An Hee Dae,Lee Sang Ho,Park Jin,Min So Ra,Kim Geon Uk,Yoon Young Jun,Seo Jae Hwa,Cho Min Su,Jang Jaewon,Bae Jin-Hyuk,Lee Sin-Hyung,Kang In Man

Funder

National Research Foundation of Korea

BK21 FOUR project

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

IC Design Education Center

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

https://link.springer.com/content/pdf/10.1007/s42835-022-01122-2.pdf

Reference34 articles.

1. Chowdhury S, Wong MH, Swenson BL, Mishra UK (2011) CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion. IEEE Electron Device Lett 33:41–43

2. Chowdhury S, Swenson BL, Mishra UK (2008) Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer. IEEE Electron Device Lett 29:543–545

3. Ji D, Agarwal A, Li W, Keller S, Chowdhury S (2018) Demonstration of GaN current aperture vertical electron transistors with aperture region formed by ion implantation. IEEE Trans Electron Devices 65:483–487

4. Ji D, Agarwal A, Li H, Li W, Keller S, Chowdhury S (2018) 880 V/2.7 mΩ⋅cm2 MIS Gate Trench CAVET on Bulk GaN substrates. IEEE Electron Device Lett 39:863–865

5. Ben-Yaacov I, Seck YK, Mishra UK, DenBaars SP (2004) AlGaN/GaN current aperture vertical electron transistors with regrown channels. J Appl Phys 95:2073–2078

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1. Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage;physica status solidi (a);2024-07-25

2. High-breakdown-voltage GaN-based vertical FinFET design;Journal of Power Electronics;2023-12-21

3. Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2023-02-28

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