The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors-Reference-Cited by-同舟云学术

The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors

Published:2016-04-02 Issue:1-4 Volume:36 Page:129-134
ISSN:1385-3449
Container-title:Journal of Electroceramics
language:en
Short-container-title:J Electroceram

Author:

Park Jozeph,Kim Chang Sun,Kim Yang Soo,Park Yun Chang,Park Hyung Jin,Bae Byeong-Soo,Park Jin-Seong,Kim Hyun-Suk

Funder

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanics of Materials,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10832-016-0022-5.pdf

Reference23 articles.

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2. J.S. Park, W.J. Maeng, H.S. Kim, J.S. Park, Thin Solid Films 520, 1679 (2012)

3. J.S. Park, H. Kim, I.D. Kim, J. Electroceram. 32, 117 (2014)

4. H. Hosono, J. Non-Cryst. Solids 352, 851 (2006)

5. M.J. Powell, IEEE Trans. Electron. Dev. 36, 12 (1989)

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