The effects of N+ dose in implantation into 6h-sic epilayers-Reference-Cited by-同舟云学术

The effects of N+ dose in implantation into 6h-sic epilayers

Published:1995-04 Issue:4 Volume:24 Page:235-240
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Kimoto Tsunenobu,Itoh Akira,Matsunami Hiroyuki,Nakata Toshitake,Watanabe Masanori

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02659681.pdf

Reference24 articles.

1. Silicon Carbide and Related Materials, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M.M. Rahman, (London: Institute of Physics, 1994).

2. Yu.M. Tairov and V.F. Tsvetkov,J. Cryst. Growth 52, 146 (1981).

3. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino and H. Matsunami,Ext. Abstr. 19th Conf. on Solid State Devices and Materials, Tokyo (Tokyo: Business Center for Academic Soci- eties Japan, 1987), p. 227.

4. H.S. Kong, J.T. Glass and R.F. Davis,J. Appl. Phys. 64,2672 (1988).

5. J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr.,Physica B 185, 461 (1993).

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