Analytical Investigations About the Basic Semiconductor Equations-Reference-Cited by-同舟云学术

Analytical Investigations About the Basic Semiconductor Equations

Published:1984 Issue: Volume: Page:127-148
ISSN:
Container-title:Analysis and Simulation of Semiconductor Devices
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Author:

Selberherr Siegfried

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-8752-4_5.pdf

Reference44 articles.

1. Adachi, T., Yoshii, A., Sudo, T.: Two-Dimensional Semiconductor Analysis Using Finite-Element Method. IEEE Trans. Electron Devices ED-26, 1026–1031 (1979).

2. Bank, R. E., Jerome, J. W., Rose, D. J.: Analytical and Numerical Aspects of Semiconductor Device Modeling. Report 82–11274-2, Bell Laboratories (1982).

3. Chryssafis, A., Love, W.: A Computer-Aided Analysis of One-Dimensional Thermal Transients in n-p-n Power Transistors. Solid-State Electron. 22, 249–256 (1979).

4. Crowell, C. R., Beguwala, M.: Recombination Velocity Effects on Current Diffusion and IMREF in Schottky Barriers. Solid-State Electron. 4, No. 11, 1149–1157 (1971).

5. DeMari, A.: An Accurate Numerical Steady-State One-Dimensional Solution of the P-N Junction. Solid-State Electron. 11, 33–58 (1968).

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