Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration-Reference-Cited by-同舟云学术

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Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration

Published:2022-04-28 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)
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Author:

Dhivyasri G.¹,Nirmal D.²,Manikandan M.³,Gokiladeepa G.⁴,Ajayan J.⁵,Menagadevi M¹

Affiliation:

1. Dr. N.G.P Institute of Technology,Department of BME,Tamilnadu,India

2. Karunya University,Department of ECE,Tamilnadu,India

3. Presidency University,Department of ECE,Karnataka,India

4. Suguna College of Engineering,Dept. of CSE,Tamilnadu,India

5. SR University,Department of ECE,Warangal,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9828864/9828869/09828912.pdf?arnumber=9828912

Reference16 articles.

1. Unified Analysis of Discontinuous Galerkin Methods for Elliptic Problems

2. On discontinuous Galerkin methods for elliptic problems with discontinuous coefficients, Computational Methods in Applied Mathematics;dryja,2003

3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

4. Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

5. On the importance of radiative and Auger losses in GaN-based quantum wells

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