The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors

Published:2022-06 Issue:3 Volume:51 Page:192-198
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Abdelaaziz Boulgheb ,Lakhdara Maya,Latreche Saida

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063739722010036.pdf

Reference21 articles.

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2. Curry, M.J., England, T.D., Bishop, N.C., Ten-Eyck, G., Wendt, J.R., Pluym, T., et al., Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor, Appl. Phys. Lett., 2015, vol. 106, no. 20, p. 203505. https://doi.org/10.1063/1.4921308

3. Schroter, M. and Pawlak, A., SiGe heterojunction bipolar transistor technology for sub-mm-wave electronics—state-of-the-art and future prospects, in Proceedings of the 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE, 2018, pp. 60–63. https://doi.org/10.1109/SIRF.2018.8304230

4. Omer, B. A., Liu, Q. Z., Rainey, B., Stricker, A., Geiss, P., Gray, P., et al., A 0.13 pm BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT, in Proceedings of the IEEE GBCTM Conference, 2003, pp. 203–206. https://doi.org/10.1109/BIPOL.2003.1274966

5. Voinigescu, S. P., Shopov, S., and Chevalier, P., Millimeter-wave silicon transistor and benchmark circuit scaling through the 2030 ITRS horizon, in Proceedings of the Global Symposium on Millimeter-Waves GSMM, IEEE, 2015, pp. 1–3. https://doi.org/10.1109/GSMM.2015.7175460