A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT-Reference-Cited by-同舟云学术

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A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

Published:2003 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat No 03CH37440) BIPOL-03
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Author:

Orner ,Liu ,Rainey ,Stricker ,Geiss ,Gray ,Zierak ,Gordon ,Collins ,Ramachandran ,Hodge ,Willets ,Joseph ,Dunn ,Rieh ,Jeng ,Eld ,Freeman ,Ahlgren

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8978/28492/01274966.pdf?arnumber=1274966

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors;Russian Microelectronics;2022-06

3. f T × BV cbo product modeling for SiGe:C HBTs;Semiconductors;2009-12

4. Device Metrics;Circuit and Interconnect Design for RF and High Bit-Rate Applications;2008

5. Industry Examples at the State-of-the-Art;Fabrication of SiGe HBT BiCMOS Technology;2007-12-13

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