Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2-Reference-Cited by-同舟云学术

Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2

Published:1992-08 Issue:8 Volume:21 Page:805-810
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Johnson F. Scott,Miles Donald S.,Grider Douglas T.,Wortman J. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02665519.pdf

Reference21 articles.

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2. D. T. Grider, M. C. Öztürk, M. Sanganeria and J. J. Wort- man, “Rapid Thermal CVD Polycrystalline Silicon-Germa- nium Alloys as an Alternative Gate Electrode to Polycrys- talline Silicon” presented at the Electron. Mater. Conf., Boulder CO (1991).

3. T. King, J. R. Pfiester, J. D. Shott, J. P. McVittie and K. C. Saraswat, IEDM Tech. Di 253 (1990).

4. Y. Zhong, M. C. Öztürk, D. T. Grider, J. J. Wortman and M. A. Littlejohn, Appl. Phys. Lett.57, 2092 (1990).

5. A. H. Krist and D. J. Godbey, Appl. Phys. Lett.58, 1899 (1991).

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