Thermal atomic layer etching of germanium-rich SiGe using an oxidation and “conversion-etch” mechanism
Author:
Affiliation:
1. Department of Chemistry, University of Colorado, Boulder, Colorado 80309-0215
2. ASM Microchemistry Oy, Pietari Kalmin katu 3 F2, 00560 Helsinki, Finland
3. Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland
Funder
Advanced Industries Accelerator Program, State of Colorado
Defense Advanced Research Projects Agency
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/am-pdf/10.1116/6.0000834
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