Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Physics and Astronomy (miscellaneous)
Link
http://link.springer.com/article/10.1007/s40094-018-0272-5/fulltext.html
Reference13 articles.
1. Ang, K., Chui, K.: Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors. Appl. Phys. Lett. 86, 093102 (2005)
2. Moroz, V., Eneman, G., Verheyen, P., Nouri, F., Washington, L., Smith, L, Jurczak, M., Pramanik, D., Xu, X.: The impact of layout on stress-enhanced transistor performance. SISPAD, pp. 143–146 (2005)
3. Flachowsky, S., Iiigen, R., Hermann, T., Klix, W., Stenzel, R.: Detailed simulation study of embedded SiGe and Si: C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors. J. Vac. Sci. Technol. B 28(1), C1G12 (2010)
4. Donaton, R.A., Chidambarrao, D., Johnsion, J., Chang, P., Liu, Y., Henson, W.K., Holt, J., Li, X., Li, J., Domenicucci, A., Madan, A., Rim, K., Wann, C.: Design and fabrication of MOSFETs with a reverse embedded SiGe (Rev. e-SiGe) structure. IEDM Tech. Dig., pp. 1–4 (2006)
5. Rim, K.: Scaling of strain-induced mobility enhancements in advanced CMOS technology. ICSICT 2008, pp. 105–108 (2008)
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