Author:
Dhar Rajarshi,Halder Payel,Deyasi Arpan
Reference17 articles.
1. Upadhyay S, Mandal A, Chavan V, Subrahmanyam NBV, Bhagwat P, Chakrabarti S (2018) Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots. In: Proceedings volume 10543: quantum dots and nanostructures: growth, characterization, and modeling XV; 1054309
2. Chee SW, Kammler M, Graham J, Gignac L, Reuter MC, Hull R, Ross’ FM (2018) Directed self-assembly of ge quantum dots using focused Si2 + ion beam patterning. Sci Rep 8:9361
3. Li WQ, Xiao XH, Stepanov AL, Dai ZG, Wu W, Cai GX, Ren F, Jiang CZ (2013) The ion implantation-induced properties of one-dimensional nanomaterials. Nanoscale Res Lett 8:175
4. Hu Y, Jiang H, Lau KM, Li Q (2018) Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric. Semicond Sci Technol 33(4):045004
5. Hong MH, Perng DC (2017) Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures. J Theor Appl Phys 11(4):313–317