Quantification of the Evolution of Silicon Acoustic Properties in Si(1-x)Gex Binary Alloy-Reference-Cited by-同舟云学术

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Quantification of the Evolution of Silicon Acoustic Properties in Si(1-x)Gex Binary Alloy

Published:2022-03-22 Issue:16 Volume:14 Page:10873-10879
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Touati Ibtissem,Doghmane Abdellaziz,Khoualdia Assia,Hadjoub Zahia

Funder

unniversité badji mokhtar annaba

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01821-5.pdf

Reference35 articles.

1. Raynal PE, Loup V, Vallier L, Martin M, Moeyaert J, Pelissier B, Rodriguez P, Hartmann JM, Besson P (2018) Wet and siconi cleaning sequences for SiGe p-type metal oxide semiconductor channels. Microelectron Eng. 84:187–188. https://doi.org/10.1016/j.mee.2017.12.003

2. Montalenti F, Rovaris F, Bergamaschini R, Miglio L, Salvalaglio M, Isella G, Isa F, Känel HV (2018) Dislocation-Free SiGe/Si Heterostructures. Crystals. 8(6):257–273. https://doi.org/10.3390/cryst8060257

3. Zaumseil P, Schubert MA, Yamamoto Y, Skibitzki O, Capellini G, Schroeder T (2016) Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon. Solid State Phen. 242:402–407. https://doi.org/10.4028/www.scientific.net/SSP.242.402

4. Li J, Han J, Jiang T, Luo L, Xiang Y (2018) Effect of synthesis hproperty of SiGe alloy. J Electron Mater. 47:4579–4584. https://doi.org/10.1007/s11664-018-6334-2

5. Li D, Zhao X, Wang L, Conrad B (2016) Optical absorption of graded buffer layers and short circuit current improvement in SiGe solar cells grown on silicon substrates. Sol Energy Mater Sol Cells. 157:973–980. https://doi.org/10.1016/j.solmat.2016.08.019

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