Insitu incorporation of Al and N andp-n junction diode fabrication in alpha(6H)-SiC thin films-Reference-Cited by-同舟云学术

Insitu incorporation of Al and N andp-n junction diode fabrication in alpha(6H)-SiC thin films

Published:1991-04 Issue:4 Volume:20 Page:289-294
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Wang Y. C.,Davis R. F.,Edmond J. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657892.pdf

Reference29 articles.

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3. G. A. Slack, J. Appl. Phys.35, 3460 (1964).

4. B. Wessels, H. C. Gatos and A. F. Witt, in Silicon Carbide-1973, R. C. Marshall, J. W. Faust, Jr. and C. E. Ryan, eds., University of South Carolina Press, Columbia, SC (1974), pp. 25–35.

5. S. Nishino, H. Matsunami and T. Tanaka, J. Cryst. Growth45, 144 (1978).

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