Processing of Silicon Carbide for Devices and Circuits-Reference-Cited by-同舟云学术

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Processing of Silicon Carbide for Devices and Circuits

Published:2000 Issue: Volume: Page:178-249
ISSN:
Container-title:Processing of Wide Band Gap Semiconductors
language:
Short-container-title:

Author:

Casady Jeffrey B.

Publisher

Elsevier

Reference300 articles.

1. Trans. of 2nd International High Temperature Electronics Conference (HiTEC);Cusack,101994

2. Trans. of 3rd International High Temperature Electronics Conference (HiTEC);Reinhardt,141996

3. Tech. Dig. Int 7. Elect. Dev. Meeting;Agarwal,1996

4. Trans. of 2nd International High Temperature Electronics Conference (HiTEC);Tajima,1994

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