Publisher
Springer Berlin Heidelberg
Reference31 articles.
1. L. Wegmann, Nucl. Instr. and Meth. 189 (1981) 1–6
2. N.L. Turner, These Proceedings
3. J.H. Freeman, D.J. Chivers, G.A. Gard, G.W. Hinder, B.J. Smith and J. Stephens, Ion Implantation in Semiconductors, ed., S. Namba, Plenum, NY 1975, p. 555
4. M.I. Current, D.S. Perloff and L.S. Gutai, These Proceedings.
5. D.M. Jamba, Nucl. Instr. and Meth. 189 (1981) 253–263
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Towards Next-Generation Small-Size Boron Ion Implanting Apparatus;Proceedings of the Latvian Academy of Sciences. Section B. Natural, Exact, and Applied Sciences.;2022-04-01
2. Ion Beam Technology: Overview and History;Materials Processing by Cluster Ion Beams;2015-07-21
3. Outgassing of Photoresist During Ion Implantation;MRS Proceedings;1985
4. MEASUREMENT AND CONTROL OF ION IMPLANTATION ACCELERATOR PARAMETERS;Ion Implantation Science and Technology;1984