Investigating the Effects of Channel Length and High-K Dielectric Materials on the Performance of Double-Gate MOSFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-023-00444-w.pdf
Reference17 articles.
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2. A. Sarkar, A.K. Das, S. De, C.K. Sarkar, Effect of gate engineering in double-gate MOSFETs for analog/RF applications. Microelectron. J. 43(11), 873–882 (2012)
3. U. Soma, Compression of gain in n-channel MESFET for MIMO applications. Silicon 14(9669–9673), 2016 (2022). https://doi.org/10.1007/s12633-022-01721-8 Atlas user’s manual. Silvaco, santa clara, CA, USA
4. J. Yuan, J.C.S. Woo, Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications. IEEE Electron Device Lett. 26, 87–89 (2005)
5. T.K. Chiang, A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOl MOSFET’s. Microelectron. Reliab. 49, 113–119 (2009)
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1. Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics;ECS Journal of Solid State Science and Technology;2024-07-01
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