Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET – two-dimensional analytical modeling and simulation;Reddy;IEEE Trans Electron Dev,2005
2. Physics-based modeling and simulation of dual-material gate stack (DUMGAS)MOSFET;Saxena;Electron Lett,2003
3. Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics;Lu;IEEE Trans Electron Dev Lett,1998
4. Metal electrode/high-k dielectric gate-stack technology for power management;Lee;IEEE Trans Electron Dev,2008
5. Tiwari S, Welser JJ, Kumar A, Cohen S. Straddle gate transistors: high Ion/Ioff transistors at short gate lengths. In: Proceedings of the 57th Annual Device Research Conference Digest; 1999. p. 26–7.
Cited by
40 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献