Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications-Reference-Cited by-同舟云学术

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Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications

Published:2005-02 Issue:2 Volume:26 Page:87-89
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jun Yuan ,Woo J.C.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30178/01386403.pdf?arnumber=1386403

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating the Effects of Channel Length and High-K Dielectric Materials on the Performance of Double-Gate MOSFETs;Transactions on Electrical and Electronic Materials;2023-05-23

2. Design and Performance Analysis of Advanced MOSFET Structures;Transactions on Electrical and Electronic Materials;2021-05-19

3. Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor;IEEE Transactions on Electron Devices;2020-09

4. Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments;Journal of Electronic Materials;2020-05-29

5. Effect of gate engineering in double-gate MOSFETs for analog/RF applications;Microelectronics Journal;2012-11

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