Enhanced dielectric properties of modified Ta2O5 thin films
Author:
Affiliation:
1. Department of Materials Science and Engineering, 213 Holden Hall, Virginia Tech, Blacksburg, VA 24061-0237, USA Fax: ,
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1007/s100190050101
Reference13 articles.
1. Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3
2. Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique
3. Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
4. Superconducting Sn/Sn‐oxide/Sn tunneling junctions as high‐resolution x‐ray detectors
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3. The Enhanced Dielectric and Insulating Properties of Al2O3Modified Ta2O5Thin Films;Journal of Electroceramics;2003-07
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