Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119088
Reference8 articles.
1. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
2. Effects of additive elements on electrical properties of tantalum oxide films
3. Enhancement of the dielectric constant of Ta2O5through substitution with TiO2
4. Electrical Properties of Al2 O 3 ‐ Ta2 O 5 Composite Dielectric Thin Films Prepared by RF Reactive Sputtering
5. Some Properties of RF Sputtered Al2 O 3 ‐ Ta2 O 5 Composite Thin Films
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2. Obtaining and electrical properties of ceramics based on mixed niobium and tantalum pentoxide Nb2(1–y)Ta2y O5;Inorganic Materials: Applied Research;2017-03
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