Investigation of microstructure and V-defect formation in InxGa1−xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Investigation of microstructure and V-defect formation in InxGa1−xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

Published:2005-05 Issue:5 Volume:34 Page:605-611
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Johnson M. C.,Liliental-Weber Z.,Zakharov D. N.,Mccready D. E.,Jorgenson R. J.,Wu J.,Shan W.,Bourret-Courchesne E. D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-005-0072-y.pdf

Reference32 articles.

1. M. Yamada, Y. Narukawa, and T. Mukai, Jpn. J. Appl. Phys. 41, L246 (2002).

2. Y.C. Shen, J.J. Wierer, M.R. Krames, M.J. Ludowise, M.S. Misra, F. Ahmed, A.Y. Kim, G.O. Mueller, J.C. Bhat, S.A. Stockman, and P.S. Martin, Appl. Phys. Lett. 82, 2221 (2003).

3. C.H. Liu, Y.K. Su, T.C. Wen, S.J. Chang, and R.W. Chuang, J. Cryst. Growth 254, 336 (2003).

4. U. Kaufman, M. Kunzar, K. Kohler, H. Obloh, W. Pletschan, P. Schlotter, J. Wagner, A. Ellens, W. Rossner, and M. Kobusch, Phys. Status Solidi (a) 192, 246 (2002).

5. Sunwoon Kim, Kyuhan Lee, Keunseop Park, and Chang-Soo Kim, J. Cryst. Growth 247, 62 (2003).

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2. The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells;Journal of Microscopy;2017-10-11

3. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy;Journal of Applied Physics;2015-10-21

4. Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures;physica status solidi (b);2015-02-25

5. Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes;Journal of Crystal Growth;2014-04

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