Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Well width study of InGaN multiple quantum wells for blue–green emitter
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2. Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device’s operating voltage;Journal of Physics D: Applied Physics;2021-01-23
3. Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers;Journal of Alloys and Compounds;2019-10
4. Impact of quantum dots on III-nitride lasers: a theoretical calculation of threshold current densities;Japanese Journal of Applied Physics;2019-05-23
5. Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers;Semiconductor Science and Technology;2018-11-26
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