TEM investigation of silicon carbide wafers with reduced micropipe density-Reference-Cited by-同舟云学术

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TEM investigation of silicon carbide wafers with reduced micropipe density

Published:2000-03 Issue:3 Volume:29 Page:364-367
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Saddow S. E.,Schattner T. E.,Shamsuzzoha M.,Rendakova S. V.,Dmitriev V. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-000-0078-4.pdf

Reference7 articles.

1. S. Rendakova and V. Dmitriev, Abstracts of Fall ’97 MRS Meeting (Warrendale, PA: MRS, 1997), pp. 149–150.

2. TDI, Inc. Gaithersburg, MD 20877; http//tdii.com.

3. S. Rendakova, N. Kuznetsov, N. Savkina, M. Rastegaeva, A. Andreev, M. Minbaeva, A. Morozov, and V. Dimitriev, to be published in the MRS proceedings.

4. S.V. Rendakova, I.P. Nikitina, A.S. Tregubova, and V.A. Dimitriev, J. Electron. Mater. 27, 292 (1998).

5. S. Rendakova, V. Ivantsov, and V. Dimitriev, Mater. Sci. Forum, 264–268, 163 (1998).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Films and Coatings;Silicon Carbide Biotechnology;2012

2. Pendeo Epitaxy Of 3C-SiC on Si Substrates;MRS Proceedings;2000

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