Pendeo Epitaxy Of 3C-SiC on Si Substrates

Abstract

ABSTRACTPendeo Epitaxy is a type of Lateral Epitaxial Overgrowth (LEO) that instead of using a dielectric buffer layer, uses an etched substrate to grow laterally without an interface layer. We report the first successful growth of 3C-SiC on Si using Pendeo epitaxy. Rectangular stripes of 3C-SiC on (100) Si substrates were fabricated, along both the [110] and [100] directions. Pendeo epi was only observed for columns parallel to [001], indicating a preferred growth facet for Pendeo epi of 3C-SiC on Si. SEM and TEM investigations were performed to assess the material quality of the Pendeo 3C-SiC material. Films were grown for 60 min at 1310°C and film coalescence was achieved without evidence of voids where the growth fronts joined. TEM data indicate not only the growth of vertical and lateral 3C-SiC on the 3C-SiC seed layer but direct nucleation of 3C-SiC on the exposed Si columns side wall and trench bottom, despite the lack of a carbonization procedure. The quality of the Pendeo 3C-SiC film appears to be of high quality indicating that Pendeo epi of 3C-SiC on low-cost, large-diameter Si substrates may prove to be a cost effective way to grow device-grade SiC layers on Si substrates for device applications.