Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy-Reference-Cited by-同舟云学术

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Published:1998-04 Issue:4 Volume:27 Page:292-295
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Rendakova S. V.,Nikitina I. P.,Tregubova A. S.,Dmitriev V. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0402-y.pdf

Reference15 articles.

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4. S.V. Rendakova, I.P. Nikitina, A.S. Zubrilov, A.V. Lee-Fatou, A.V. Shchukarev and M.V. Zamoryanskaya, Inst. Phys. Conf. Ser. 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman (Bristol: IOP Publishing Ltd., 1994), p. 309.

5. T. Uemoto, Jpn. J. Appl. Phys. 34, L7 (1995).

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