Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers-Reference-Cited by-同舟云学术

Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers

Published:2013-09-25 Issue:11 Volume:42 Page:3191-3202
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jain F.,Chan P.-Y.,Suarez E.,Lingalugari M.,Kondo J.,Gogna P.,Miller B.,Chandy J.,Heller E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-013-2758-x.pdf

Reference36 articles.

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