Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy-Reference-Cited by-同舟云学术

Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

Published:2000-08 Issue:8 Volume:29 Page:L13-L17
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Qin W.,Ast D. G.,Kamins T. I.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-000-0174-5.pdf

Reference16 articles.

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3. T.J. King, J.R. Pfiester, and K.C. Saraswat, IEEE Electon. Dev. Lett. 12, 533 (1991).

4. T. Uchino, T. Shiba, K. Ohnishi, A. Miyauchi, M. Nakata, Y. Inoue, and T. Suzuki, Proc. Int. Electron Devices Conf. (Piscataway, NJ: IEEE, 1997), p. 479.

5. Y.S. Chieh, J.P. Krusius, D. Green, and M. Öztürk, IEEE Elec. Dev. Lett. 17, 360 (1996).

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