Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si1−xGex films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483923
Reference12 articles.
1. Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon
2. Dopant segregation in polycrystalline silicon
3. Scanning transmission electron microscope microanalytical study of phosphorus segregation at grain boundaries in thin‐film silicon
4. Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy
5. The electrical properties of polycrystalline silicon films
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2. Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%);Microelectronic Engineering;2016-05
3. Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering;Nanotechnology;2016-03-11
4. CV characteristics of polycrystalline sige films with low GE concentration;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
5. Low-temperature dopant activation technology using elevated Ge-S/D structure;Applied Surface Science;2004-03
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