Author:
Wolpert David,Ampadu Paul
Reference38 articles.
1. Varshni YP (1967) Temperature dependence of the energy gap in semiconductors. Physica 34:149–154
2. Sze SM (1981) Physics of semiconductor devices, 2nd ed. John Wiley and Sons, NY
3. Chain K, Huang JH, Duster J, Ko PK, Hu C (1997) A MOSFET electron mobility model of wide temperature range (77–400K) for IC simulation. Semicond Sci Technol 12:355–358
4. Sabnis AG, Clemens JT (1979) Characterization of the electron mobility in the inverter Si surface. Int Electron Devices Mtg 18–21
5. Chen K, Wann HC, Dunster J, Ko PK, Hu C (1996) MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages. Solid-State Electronics 39:1515–1518
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献