MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages-Reference-Cited by-同舟云学术

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MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

Published:1996-10 Issue:10 Volume:39 Page:1515-1518
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Kai,Clement Wann H.,Dunster Jon,Ko Ping K.,Hu Chenming,Yoshida Makoto

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

2. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

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