Bilateral microscopy of dislocations and dislocation diodes in germanium

Author:

Calzecchi F.,Gondi P.,Schintu F.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Reference9 articles.

1. Some recent papers are:R. M. Broudy:Adv. Phys.,12, 135 (1966);M. Meyer, M. H. Miles andT. Ninomiya:Journ. Appl. Phys.,38, 4481 (1967);L. Blick andW. Schröter:Phys. Status Solidi,14, K 55 (1966);F. Calzecchi, P. Gondi andS. Mantovani:Nuovo Cimento,53 B, 203 (1968), where previous works are also quoted.

2. W. Bardsley:Progr. in Semicond., vol.4 (1960), p. 157;E. Billing:Proc. Roy. Soc., A235, 37 (1956);W. G. Pfann andF. L. Vogel:Acta Met.,5, 377 (1957);W. Bardsley, R. L. Bell andB. W. Straughan:Journ. Electron Cont.,5, 19 (1958).

3. J. Hornstra:Journ. Phys. Chem. Solids,5, 129 (1958).

4. F. Calzecchi, A. Gardini andP. Gondi:Nuovo Cimento,50 B, 263 (1967).

5. I. G. Cressel andJ. A. Powell:Progr. in Semicond.,2, 137 (1957).

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