Electronic Properties of Dislocations-Reference-Cited by-同舟云学术

Electronic Properties of Dislocations

Published:2015-10 Issue: Volume:242 Page:141-146
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Reiche Manfred¹,Kittler Martin²,Pippel Eckhard¹,Kosina Hans³,Lugstein Alois³,Uebensee Hartmut⁴

Affiliation:

1. Max Planck Institute of Microstructure Physics

2. BTU Cottbus

3. Vienna University of Technology

4. CIS Research Institute of Microsensorics

Abstract

Dislocations are one-dimensional crystal defects. Their dimension characterize the defects as nanostructures (nanowires). Measurements on defined dislocation arrays proved numerous exceptional electronic properties. A model of dislocations as quantum wires is proposed. The formation of the quantum wire is a consequence of the high strain level on the dislocation core modi-fying locally the band structure.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.141.pdf

Reference23 articles.

1. C.H. Lin, R. Kambhampati, R.J. Miller, T.B. Hook, A. Bryant, W. Haensch, P. Oldiges, I. Lauer, T. Yamashita, V. Basker, T. Standaert, K. Rim, E. Loeobandung, H. Bu, and M. Khare, 2012 Symposium on VLSI Technology, Digest, 15 (2012).

2. E. Prati and T. Shinada, IEDM Techn. Digest, 1. 2. 1. (2014).

3. F. Calzecchi, P. Gondi, and F. Schintu, Nuovo Cimento 58B, 376 (1968).

4. V.G. Eremenko, V.I. Nikitenko, and A.B. Yakimov, Sov. Phys. - JETP 40, 570 (1975).

5. M. Reiche, M. Kittler, W. Erfurth, E. Pippel, K. Sklarek, H. Blumtritt, A. Haehnel, and H. Uebensee, J. Appl. Phys. 115, 194303 (2014).