Transport of Charge Carriers along Dislocations in Si and Ge-Reference-Cited by-同舟云学术

Transport of Charge Carriers along Dislocations in Si and Ge

Published:2019-07-17 Issue:17 Volume:216 Page:1900287
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kittler Martin¹²^ORCID,Reiche Manfred³,Schwartz Bernhard¹²,Uebensee Hartmut³,Kosina Hans⁴,Stanojevic Zlatan⁵,Baumgartner Oskar⁵,Ortlepp Thomas³

Affiliation:

1. Brandenburg University of Technology Erich-Weinert-Str. 1 03046 Cottbus Germany

2. IHP Microelectronics PF 1466 15204 Frankfurt (Oder) Germany

3. CIS Research Institute of Microsensorics Konrad-Zuse-Str. 14 99099 Erfurt Germany

4. Institute of MicroelectronicsVienna University of Technology Gußhausstr. 27-29 1040 Vienna Austria

5. Global TCAD Solutions Bösendorferstr. 1/12 1010 Vienna Austria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900287

Reference41 articles.

1. Dislocations in the diamond lattice

2. Extended Defects in Germanium

3. Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects

4. Electrical Properties of Dislocations in Ge and Si

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