Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections-Reference-Cited by-同舟云学术

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Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections

Published:2020-04-07 Issue:4 Volume:16 Page:311-320
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lee Hyeonchul,Jeong Minsu,Kim Gahui,Son Kirak,Seo Jeongmin,Kim Taek-Soo,Park Young-Bae

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-020-00210-7.pdf

Reference40 articles.

1. Ryu, S.W., Kim, S., Yoon, J., Tanskanen, J.T., Kim, H., Lee, H.B.R.: Area-selective chemical vapor deposition of Co for Cu capping layer. Curr. Appl. Phys. 16, 88 (2016)

2. Feng, J., Gong, X., Lou, X., Gordon, R.G.: Direct-liquid-evaporation chemical vapor deposition of nanocrystalline cobalt metal for nanoscale copper interconnect encapsulation. ACS Appl. Mater. Interfaces 9, 10914–10920 (2017)

3. Koo, J. K., Lee, J. H.: Electrochemical Process for 3D TSV without CMP and Lithographic Processes. Electron. Mater. Lett. 10, 485-490 (2014)

4. Hu, J., Yu, M.F.: Meniscus-confined three-dimensional electrodeposition for direct writing of wire bonds. Sci. 329, 313–316 (2010)

5. Baklanov, M.R., Adelmann, C., Zhao, L., Gendt, S.D.: Advanced interconnects: materials, processing, and reliability. ECS J. Solid State Sci. Technol. 4, Y1–Y4 (2015)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial Adhesion Energies of Uniformly Self-Formed Cr2O3 Barriers for Advanced Co Interconnects;Electronic Materials Letters;2022-07-20

2. Interfacial adhesion energies of Ru–Mn direct plateable diffusion barriers prepared by atomic layer deposition for advanced Cu interconnects;Journal of Materials Science: Materials in Electronics;2021-07-10

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