Interfacial Adhesion Energies of Uniformly Self-Formed Cr2O3 Barriers for Advanced Co Interconnects
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-022-00360-w.pdf
Reference32 articles.
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3. Gall, D.: J. Appl. Phys. 119 (2016). https://doi.org/10.1063/1.4942216
4. Choi, D., Barmak, K.: On the potential of tungsten as next-generation semiconductor interconnects. Electron. Mater. Lett. 13, 449 (2017). https://doi.org/10.1007/s13391-017-1610-5
5. Murarka, S.P., Hymes, S.W.: Copper metallization for ULSL and beyond. Crit. Rev. Solid State Mater. Sci. 20, 87 (1995). https://doi.org/10.1080/10408439508243732
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