Characteristics of Copper Nitride Nanolayer Used in 3D Cu Bonding Interconnects-Reference-Cited by-同舟云学术

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Characteristics of Copper Nitride Nanolayer Used in 3D Cu Bonding Interconnects

Published:2021-05-31 Issue:5 Volume:17 Page:392-398
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Park Haesung,Seo Hankyeol,Kim Sarah Eunkyung^ORCID

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s13391-021-00299-4.pdf

Reference23 articles.

1. Rieger, M.L.: Retrospective on VLSI value scaling and lithography. J. Micro/Nanolith. MEMS MOEMS. 18(4), 040902 (2019)

2. Jones, H.: Big trouble at 3nm, Semiconductor Engineering. https://semiengineering.com/big-trouble-at-3nm/ (2018)

3. Sart, C., Estevez, R., Fiori, V., Lhostis, S., Deloffre, E., Parry, G., Gonella, R.: Cu/Si02 hybrid bonding: finite element modeling and experimental characterization. In: Proc. IEEE 6th ESTC, pp. 1–6: (2016)

4. Park, H., Kim, S.E.: Two-Step plasma treatment on copper surface for low temperature Cu thermo-compression bonding. IEEE Trans. Compon. Packag. Manuf. Tech. 10, 332–338 (2020)

5. Tan, C.S., Lim, D.F., Singh, S.G., Goulet, S.K., Bergkvist, M.: Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol. Appl. Phys. Lett. 95, 192108 (2009)

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