Interfacial void segregation of Cl in Cu-Sn micro-connects-Reference-Cited by-同舟云学术

Interfacial void segregation of Cl in Cu-Sn micro-connects

Published:2017-03-11 Issue:4 Volume:13 Page:307-312
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Ross Glenn,Tao Xiaoma,Broas Mikael,Mäntyoja Nikolai,Vuorinen Vesa,Graff Andreas,Altmann Frank,Petzold Matthias,Paulasto-Kröckel Mervi

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s13391-017-6304-5/fulltext.html

Reference31 articles.

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4. P. Borgesen, L. Yin, P. Kondos, D. W. Henderson, G. Servis, J. Therriault, J. Wang, and K. Srihari, in Electron. Components Technol. Conf. (IEEE, 2007), pp. 136–146.

5. K. Zeng, R. Stierman, T.-C. Chiu, D. Edwards, K. Ano, and K. N. Tu, J. Appl. Phys. 97, 24508 (2005).

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