Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen-Reference-Cited by-同舟云学术

Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen

Published:2002 Issue: Volume: Page:269-288
ISSN:
Container-title:Progress in SOI Structures and Devices Operating at Extreme Conditions
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Author:

Popov V. P.,Gutakovskii A. K.,Safronov L. N.,Tyschenko I. E.,Zhuravlev S. K.,Talochkin A. B.,Antonova A. I.,Naumova O. V.,Obodikov V. I.,Misiuk A.,Bak-Misiuk J.,Domagala J.,Romano-Rodrigues A.,Bachrouri A.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-010-0339-1_21

Reference23 articles.

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3. M. K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarval, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, E.E. Chaban.. (1997) On the mechanism of the hydrogen-induced exfoliation of silicon. J. Vac. Sci. Technol. B 15, 1065–1073.

4. F. A. Reboredo, M. Ferconi, S. T. Pantelides. (1999) Theory of the nucleation, growth, and structure of hydrogen-induced extended defects in silicon. Phys. Rev. Let., 82, 4870–4873.

5. H. Takaba, A. Endou, A. Yamada, M. Kubo, K. Teraishi, K.G. Nakamura, K. Ishioka, M. Kitajama, A. Miyamoto. (2000) Tight-binding molecular dynamics study of hydrogen molecule inside silicon crystal. Jpn. Journ. Appl. Phys., 39, 2744–2747.

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