Theory of the Nucleation, Growth, and Structure of Hydrogen-Induced Extended Defects in Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.4870/fulltext
Reference14 articles.
1. Near‐surface microstructural modifications in low energy hydrogen ion bombarded silicon
2. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
3. On the mechanism of the hydrogen-induced exfoliation of silicon
4. Silicon on insulator material technology
5. Defects in single-crystal silicon induced by hydrogenation
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